UJ4SC075018L8S

750V-18mΩ SiC FET

UJ4SC075018L8S

The UJ4SC075018L8S is a 750V, 18mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Features
  • On-resistance RDS(on): 18mΩ (typ)
  • Operating temperature: 175°C (max)
  • Excellent reverse recovery: Qrr = 128nC
  • Low body diode VFSD: 1.14V
  • Low gate charge: QG = 37.8nC
  • Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive