UJ3N065025K3S

650V-25mΩ SiC Normally-on JFET

UJ3N065025K3S

United Silicon Carbide, Inc offers the high-performance G3 SiC
normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Features
  • Typical on-resistanceRDS(on),typ of 25mΩ
  • Voltage controlled
  • Maximum operating temperature of 175°C
  • Extremely fast switching not dependent on temperature
  • Low gate charge
  • Low intrinsic capacitance