1200V-35mΩ SiC Normally-on JFET
United Silicon Carbide’s UJ3N120035K3S is a 1200V 35mΩ high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.
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